All MOSFET. ZXM66P02N8 Datasheet

 

ZXM66P02N8 Datasheet and Replacement


   Type Designator: ZXM66P02N8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.7 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Qg ⓘ - Total Gate Charge: 43.3 nC
   Cossⓘ - Output Capacitance: 2068 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8
 

 ZXM66P02N8 substitution

   - MOSFET ⓘ Cross-Reference Search

 

ZXM66P02N8 Datasheet (PDF)

 ..1. Size:610K  diodes
zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf pdf_icon

ZXM66P02N8

A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti

 7.1. Size:65K  diodes
zxm66p03n8.pdf pdf_icon

ZXM66P02N8

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 7.2. Size:64K  zetex
zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc

 7.3. Size:831K  cn vbsemi
zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8

ZXM66P03N8TAwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BRCS080N10SHRA | IXFT50N60P3 | 2SK3043 | 2SK3827 | AP2304GN | 2SK1310A | PK650DY

Keywords - ZXM66P02N8 MOSFET datasheet

 ZXM66P02N8 cross reference
 ZXM66P02N8 equivalent finder
 ZXM66P02N8 lookup
 ZXM66P02N8 substitution
 ZXM66P02N8 replacement

 

 
Back to Top

 


 
.