ZXM66P02N8 PDF and Equivalents Search

 

ZXM66P02N8 PDF Specs and Replacement


   Type Designator: ZXM66P02N8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A

Electrical Characteristics


   Cossⓘ - Output Capacitance: 2068 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8
 

 ZXM66P02N8 substitution

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ZXM66P02N8 PDF Specs

 ..1. Size:610K  diodes
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ZXM66P02N8

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti... See More ⇒

 7.1. Size:65K  diodes
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ZXM66P02N8

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.2. Size:64K  zetex
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ZXM66P02N8

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.3. Size:831K  cn vbsemi
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ZXM66P02N8

ZXM66P03N8TA www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6... See More ⇒

Detailed specifications: DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , ZXM61P02F , ZXM62P02E6 , ZXM62P03E6 , ZXM64P02X , AO3401 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS , DMP3015LSS , DMP3020LSS , DMP3025LK3 , DMP3030SN .

Keywords - ZXM66P02N8 MOSFET specs

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