ZXM66P02N8 Datasheet. Specs and Replacement

Type Designator: ZXM66P02N8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 2068 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO8

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ZXM66P02N8 datasheet

 ..1. Size:610K  diodes
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ZXM66P02N8

A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti... See More ⇒

 7.1. Size:65K  diodes
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ZXM66P02N8

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.2. Size:64K  zetex
 zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8

ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc... See More ⇒

 7.3. Size:831K  cn vbsemi
 zxm66p03n8ta.pdf pdf_icon

ZXM66P02N8

ZXM66P03N8TA www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6... See More ⇒

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Detailed specifications: DMP2240UDM, DMP2240UW, DMP22D6UT, DMP2305U, ZXM61P02F, ZXM62P02E6, ZXM62P03E6, ZXM64P02X, AO3401, ZXMD63P02X, DMG4413LSS, DMG4435SSS, DMP3010LPS, DMP3015LSS, DMP3020LSS, DMP3025LK3, DMP3030SN

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