ZXM66P02N8. Аналоги и основные параметры
Наименование производителя: ZXM66P02N8
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.56 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Электрические характеристики
Cossⓘ - Выходная емкость: 2068 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SO8
Аналог (замена) для ZXM66P02N8
- подборⓘ MOSFET транзистора по параметрам
ZXM66P02N8 даташит
zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf
A Product Line of Diodes Incorporated ZXM66P02N8 20V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti
zxm66p03n8.pdf
ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc
zxm66p03n8ta.pdf
ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc
zxm66p03n8ta.pdf
ZXM66P03N8TA www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6
Другие MOSFET... DMP2240UDM , DMP2240UW , DMP22D6UT , DMP2305U , ZXM61P02F , ZXM62P02E6 , ZXM62P03E6 , ZXM64P02X , AO3401 , ZXMD63P02X , DMG4413LSS , DMG4435SSS , DMP3010LPS , DMP3015LSS , DMP3020LSS , DMP3025LK3 , DMP3030SN .
History: SI2318CDS | PJW4N06A-AU | DG2N65-252 | MSD80N03 | CS10N65FA9R | ZXMP6A16DN8 | CM8N80
History: SI2318CDS | PJW4N06A-AU | DG2N65-252 | MSD80N03 | CS10N65FA9R | ZXMP6A16DN8 | CM8N80
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Список транзисторов
Обновления
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