ZXMP3A16N8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMP3A16N8
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.8 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 6.7 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 29.6 nC
Conductancia de drenaje-sustrato (Cd): 1022 pF
Resistencia drenaje-fuente RDS(on): 0.07 Ohm
Empaquetado / Estuche: SO8
Búsqueda de reemplazo de MOSFET ZXMP3A16N8
ZXMP3A16N8 Datasheet (PDF)
1.1. zxmp3a16n8.pdf 
Size:154K _diodes
ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance
1.2. zxmp3a16n8ta.pdf Size:144K _zetex
ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance
2.1. zxmp3a16g.pdf Size:162K _diodes
ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES • Low on-resista
2.2. zxmp3a16gta.pdf Size:574K _diodes
A Product Line of Diodes Incorporated ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low on-resistance ID max • Fast switching speed V(BR)DSS RDS(on) max TA = 25°C • Low threshold (Notes 3) • Low gate drive 45mΩ @ VGS = -10V -7.5A • “Green” component. Lead Free Finish / RoHS compliant -30V (Note 1) 70mΩ @ VGS
2.3. zxmp3a16dn8.pdf Size:156K _diodes
ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistan
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