ZXMP3A16N8 Todos los transistores

 

ZXMP3A16N8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP3A16N8

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.8 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.7 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 29.6 nC

Conductancia de drenaje-sustrato (Cd): 1022 pF

Resistencia drenaje-fuente RDS(on): 0.07 Ohm

Empaquetado / Estuche: SO8

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ZXMP3A16N8 Datasheet (PDF)

1.1. zxmp3a16n8ta.pdf Size:144K _upd-mosfet

ZXMP3A16N8
ZXMP3A16N8

ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance

1.2. zxmp3a16n8.pdf Size:154K _diodes

ZXMP3A16N8
ZXMP3A16N8

ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance F

 2.1. zxmp3a16gta.pdf Size:574K _upd-mosfet

ZXMP3A16N8
ZXMP3A16N8

A Product Line of Diodes Incorporated ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low on-resistance ID max • Fast switching speed V(BR)DSS RDS(on) max TA = 25°C • Low threshold (Notes 3) • Low gate drive 45mΩ @ VGS = -10V -7.5A • “Green” component. Lead Free Finish / RoHS compliant -30V (Note 1) 70mΩ @ VGS

2.2. zxmp3a16g.pdf Size:162K _diodes

ZXMP3A16N8
ZXMP3A16N8

ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resistance

 2.3. zxmp3a16dn8.pdf Size:156K _diodes

ZXMP3A16N8
ZXMP3A16N8

ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance S

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