All MOSFET. ZXMP3A16N8 Datasheet

 

ZXMP3A16N8 MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMP3A16N8

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.8 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6.7 A

Total Gate Charge (Qg): 29.6 nC

Drain-Source Capacitance (Cd): 1022 pF

Maximum Drain-Source On-State Resistance (Rds): 0.07 Ohm

Package: SO8

ZXMP3A16N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP3A16N8 Datasheet (PDF)

0.1. zxmp3a16n8.pdf Size:154K _diodes

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance

0.2. zxmp3a16n8ta.pdf Size:144K _zetex

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance

 6.1. zxmp3a16g.pdf Size:162K _diodes

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES • Low on-resista

6.2. zxmp3a16gta.pdf Size:574K _diodes

ZXMP3A16N8 ZXMP3A16N8

A Product Line of Diodes Incorporated ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low on-resistance ID max • Fast switching speed V(BR)DSS RDS(on) max TA = 25°C • Low threshold (Notes 3) • Low gate drive 45mΩ @ VGS = -10V -7.5A • “Green” component. Lead Free Finish / RoHS compliant -30V (Note 1) 70mΩ @ VGS

 6.3. zxmp3a16dn8.pdf Size:156K _diodes

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16DN8 DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistan

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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