All MOSFET. ZXMP3A16N8 Datasheet

 

ZXMP3A16N8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMP3A16N8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.7 A
   Qgⓘ - Total Gate Charge: 17.2 nC
   Cossⓘ - Output Capacitance: 1022 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SO8

 ZXMP3A16N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP3A16N8 Datasheet (PDF)

 ..1. Size:154K  diodes
 zxmp3a16n8.pdf

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistance

 0.1. Size:144K  zetex
 zxmp3a16n8ta.pdf

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SO8FEATURES Low on-resistance

 6.1. Size:574K  diodes
 zxmp3a16gta.pdf

ZXMP3A16N8 ZXMP3A16N8

A Product Line ofDiodes IncorporatedZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Low threshold(Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS

 6.2. Size:162K  diodes
 zxmp3a16g.pdf

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.SOT223FEATURES Low on-resista

 6.3. Size:156K  diodes
 zxmp3a16dn8.pdf

ZXMP3A16N8 ZXMP3A16N8

ZXMP3A16DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.045 ; ID= -5.5ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistan

Datasheet: DMP3160L , ZXM61P03F , ZXM64P03X , ZXM66P03N8 , ZXMD63P03X , ZXMP3A13F , ZXMP3A16DN8 , ZXMP3A16G , K2611 , ZXMP3A17DN8 , ZXMP3A17E6 , ZXMP3F30FH , ZXMP3F35N8 , ZXMP3F36N8 , ZXMP3F37DN8 , ZXMP3F37N8 , BSS84(Z) .

 

 
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