ZXMP3A16N8 datasheet, аналоги, основные параметры

Наименование производителя: ZXMP3A16N8  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A

Электрические характеристики

Cossⓘ - Выходная емкость: 1022 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm

Тип корпуса: SO8

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Аналог (замена) для ZXMP3A16N8

- подборⓘ MOSFET транзистора по параметрам

 

ZXMP3A16N8 даташит

 ..1. Size:154K  diodes
 zxmp3a16n8.pdf pdf_icon

ZXMP3A16N8

ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance

 0.1. Size:144K  zetex
 zxmp3a16n8ta.pdf pdf_icon

ZXMP3A16N8

ZXMP3A16N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V; RDS(ON) = 0.040 ID = -6.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance

 6.1. Size:574K  diodes
 zxmp3a16gta.pdf pdf_icon

ZXMP3A16N8

A Product Line of Diodes Incorporated ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID max Fast switching speed V(BR)DSS RDS(on) max TA = 25 C Low threshold (Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS

 6.2. Size:162K  diodes
 zxmp3a16g.pdf pdf_icon

ZXMP3A16N8

ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V RDS(on) = 0.045 ID = -7.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES Low on-resista

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