BSP75N Todos los transistores

 

BSP75N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSP75N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.675 Ohm

Encapsulados: SOT223

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BSP75N datasheet

 ..1. Size:521K  diodes
bsp75n.pdf pdf_icon

BSP75N

BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m Maximum nominal load current(a) 1.1A (VIN = 5V) SOT223 Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ Description S Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD

 9.1. Size:141K  siemens
bsp752t.pdf pdf_icon

BSP75N

Target data sheet BSP 752 T Smart Power High-Side-Switch Features Product Summary Overvoltage protection 60 V Overload protection Vbb(AZ) Current limitation Operating voltage 5...34 V Vbb(on) On-state resistance 200 Short circuit protection RON m Nominal load current 1.3 A Thermal shutdown with restart IL(nom) Overvoltage protection (including load dump)

 9.2. Size:70K  siemens
bsp75.pdf pdf_icon

BSP75N

HITFET BSP 75 Smart Lowside Power Switch Features Product Summary Logic Level Input Continuous drain source voltage V 55 V DS Input protection (ESD) On-state resistance R 550 DS(ON) m Thermal shutdown (with restart) Current limitation I 1 A D(lim) Overload protection Nominal load current I 0.7 A D(Nom) Short circuit protection Clamping energy E 550 mJ A

 9.3. Size:70K  siemens
bsp75a.pdf pdf_icon

BSP75N

HITFET BSP 75A Smart Lowside Power Switch Features Product Summary Logic Level Input Continuous drain source voltage V 55 V DS Input protection (ESD) On-state resistance R 550 DS(ON) m Thermal shutdown (with restart) Current limitation I 1 A D(lim) Overload protection Load current (ISO) I 0.7 A D(ISO) Short circuit protection Clamping energy E 550 mJ AS

Otros transistores... DMS2120LFWB , DMS2220LFDB , DMS2220LFW , 2SK311 , 2SK3107C , 2SK3112 , 2SK3114B , BSP75G , IRF1010E , ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG .

 

 

 

 

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