BSP75N
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSP75N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.675
Ohm
Package:
SOT223
BSP75N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSP75N
Datasheet (PDF)
..1. Size:521K diodes
bsp75n.pdf
BSP75N60V self-protected low-side IntellifetTM MOSFET switchSummaryContinuous drain source voltage VDS=60VOn-state resistance 500m Maximum nominal load current(a) 1.1A (VIN = 5V) SOT223Minimum nominal load current(c) 0.7A (VIN = 5V)Clamping energy 550mJDescriptionSSelf-protected low side MOSFET. Monolithic over temperature, overcurrent, over voltage (active clamp) and ESD
9.1. Size:141K siemens
bsp752t.pdf
Target data sheetBSP 752 TSmart Power High-Side-SwitchFeatures Product SummaryOvervoltage protection 60 V Overload protection Vbb(AZ) Current limitation Operating voltage 5...34 VVbb(on)On-state resistance 200 Short circuit protection RON mNominal load current 1.3 A Thermal shutdown with restart IL(nom) Overvoltage protection (including load dump)
9.2. Size:70K siemens
bsp75.pdf
HITFET BSP 75Smart Lowside Power SwitchFeatures Product Summary Logic Level InputContinuous drain source voltage V 55 VDS Input protection (ESD)On-state resistance R 550DS(ON) m Thermal shutdown (with restart)Current limitation I 1 AD(lim) Overload protectionNominal load current I 0.7 AD(Nom) Short circuit protectionClamping energy E 550 mJA
9.3. Size:70K siemens
bsp75a.pdf
HITFET BSP 75ASmart Lowside Power SwitchFeatures Product Summary Logic Level InputContinuous drain source voltage V 55 VDS Input protection (ESD)On-state resistance R 550DS(ON) m Thermal shutdown (with restart)Current limitation I 1 AD(lim) Overload protectionLoad current (ISO) I 0.7 AD(ISO) Short circuit protectionClamping energy E 550 mJAS
9.4. Size:772K diodes
bsp75gq.pdf
BSP75GQ 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V Short Circuit Protection with Auto Restart On-State Resistance: 550m Over Voltage Protection (Active Clamp) Nominal Load Current (VIN = 5V) : 1.4A Thermal Shutdown with Auto Restart Clamping Energy: 550mJ
9.5. Size:376K diodes
bsp75g.pdf
BSP75G60V self-protected low-side IntelliFETTM MOSFET switchSummaryContinuous drain source voltage VDS=60VOn-state resistance 550m SOT223Nominal load current 1.4A (VIN = 5V)Clamping energy 550mJDescriptionSSelf-protected low side MOSFET. Monolithic over temperature, overcurrent, over voltage (active clamp) and ESD protected logic levelDDpower MOSFET intended as a ge
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