Справочник MOSFET. BSP75N

 

BSP75N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSP75N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.675 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для BSP75N

 

 

BSP75N Datasheet (PDF)

 ..1. Size:521K  diodes
 bsp75n.pdf

BSP75N BSP75N

BSP75N60V self-protected low-side IntellifetTM MOSFET switchSummaryContinuous drain source voltage VDS=60VOn-state resistance 500m Maximum nominal load current(a) 1.1A (VIN = 5V) SOT223Minimum nominal load current(c) 0.7A (VIN = 5V)Clamping energy 550mJDescriptionSSelf-protected low side MOSFET. Monolithic over temperature, overcurrent, over voltage (active clamp) and ESD

 9.1. Size:141K  siemens
 bsp752t.pdf

BSP75N BSP75N

Target data sheetBSP 752 TSmart Power High-Side-SwitchFeatures Product SummaryOvervoltage protection 60 V Overload protection Vbb(AZ) Current limitation Operating voltage 5...34 VVbb(on)On-state resistance 200 Short circuit protection RON mNominal load current 1.3 A Thermal shutdown with restart IL(nom) Overvoltage protection (including load dump)

 9.2. Size:70K  siemens
 bsp75.pdf

BSP75N BSP75N

HITFET BSP 75Smart Lowside Power SwitchFeatures Product Summary Logic Level InputContinuous drain source voltage V 55 VDS Input protection (ESD)On-state resistance R 550DS(ON) m Thermal shutdown (with restart)Current limitation I 1 AD(lim) Overload protectionNominal load current I 0.7 AD(Nom) Short circuit protectionClamping energy E 550 mJA

 9.3. Size:70K  siemens
 bsp75a.pdf

BSP75N BSP75N

HITFET BSP 75ASmart Lowside Power SwitchFeatures Product Summary Logic Level InputContinuous drain source voltage V 55 VDS Input protection (ESD)On-state resistance R 550DS(ON) m Thermal shutdown (with restart)Current limitation I 1 AD(lim) Overload protectionLoad current (ISO) I 0.7 AD(ISO) Short circuit protectionClamping energy E 550 mJAS

 9.4. Size:772K  diodes
 bsp75gq.pdf

BSP75N BSP75N

BSP75GQ 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage: VDS = 60V Short Circuit Protection with Auto Restart On-State Resistance: 550m Over Voltage Protection (Active Clamp) Nominal Load Current (VIN = 5V) : 1.4A Thermal Shutdown with Auto Restart Clamping Energy: 550mJ

 9.5. Size:376K  diodes
 bsp75g.pdf

BSP75N BSP75N

BSP75G60V self-protected low-side IntelliFETTM MOSFET switchSummaryContinuous drain source voltage VDS=60VOn-state resistance 550m SOT223Nominal load current 1.4A (VIN = 5V)Clamping energy 550mJDescriptionSSelf-protected low side MOSFET. Monolithic over temperature, overcurrent, over voltage (active clamp) and ESD protected logic levelDDpower MOSFET intended as a ge

Другие MOSFET... DMS2120LFWB , DMS2220LFDB , DMS2220LFW , 2SK311 , 2SK3107C , 2SK3112 , 2SK3114B , BSP75G , 4N60 , ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG .

 

 
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