ZXMS6004DT8 Todos los transistores

 

ZXMS6004DT8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMS6004DT8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: SM8

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ZXMS6004DT8 Datasheet (PDF)

 ..1. Size:236K  diodes
zxms6004dt8.pdf

ZXMS6004DT8
ZXMS6004DT8

A Product Line ofDiodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 0.1. Size:530K  diodes
zxms6004dt8q.pdf

ZXMS6004DT8
ZXMS6004DT8

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

 5.1. Size:479K  diodes
zxms6004dg.pdf

ZXMS6004DT8
ZXMS6004DT8

A Product Line ofDiodes IncorporatedZXMS6004DG60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 490mJDescriptionThe ZXMS6004DG is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-

 5.2. Size:425K  diodes
zxms6004dgq.pdf

ZXMS6004DT8
ZXMS6004DT8

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P

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