Справочник MOSFET. ZXMS6004DT8

 

ZXMS6004DT8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMS6004DT8
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 2.13 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Пороговое напряжение включения |Ugs(th)|: 1.5 V
   Максимально допустимый постоянный ток стока |Id|: 1.2 A
   Максимальная температура канала (Tj): 150 °C
   Сопротивление сток-исток открытого транзистора (Rds): 0.5 Ohm
   Тип корпуса: SM8

 Аналог (замена) для ZXMS6004DT8

 

 

ZXMS6004DT8 Datasheet (PDF)

 ..1. Size:236K  diodes
zxms6004dt8.pdf

ZXMS6004DT8
ZXMS6004DT8

A Product Line ofDiodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 0.1. Size:530K  diodes
zxms6004dt8q.pdf

ZXMS6004DT8
ZXMS6004DT8

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

 5.1. Size:479K  diodes
zxms6004dg.pdf

ZXMS6004DT8
ZXMS6004DT8

A Product Line ofDiodes IncorporatedZXMS6004DG60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 490mJDescriptionThe ZXMS6004DG is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-

 5.2. Size:425K  diodes
zxms6004dgq.pdf

ZXMS6004DT8
ZXMS6004DT8

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P

Другие MOSFET... 2SK3112 , 2SK3114B , BSP75G , BSP75N , ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , AO4407 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , ZXMS6005DT8 , ZXMS6005SG , ZXMS6006DG , ZXMS6006DT8 , ZXMS6006SG .

 

 
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