ZXMS6004DT8 - аналоги, параметры транзистора - Справочник транзисторов

ZXMS6004DT8 даташит

..1. Size:236K diodes
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A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

0.1. Size:530K diodes
zxms6004dt8q.pdf pdf_icon

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

5.1. Size:479K diodes
zxms6004dg.pdf pdf_icon

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-

5.2. Size:425K diodes
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ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P

Другие MOSFET... 2SK3112 , 2SK3114B , BSP75G , BSP75N , ZXMS6001N3 , ZXMS6002G , ZXMS6003G , ZXMS6004DG , NCEP15T14 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , ZXMS6005DT8 , ZXMS6005SG , ZXMS6006DG , ZXMS6006DT8 , ZXMS6006SG .