ZXMS6004DT8 Datasheet. Specs and Replacement

Type Designator: ZXMS6004DT8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.13 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SM8

  📄📄 Copy 

ZXMS6004DT8 substitution

- MOSFET ⓘ Cross-Reference Search

 

ZXMS6004DT8 datasheet

 ..1. Size:236K  diodes
 zxms6004dt8.pdf pdf_icon

ZXMS6004DT8

A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove... See More ⇒

 0.1. Size:530K  diodes
 zxms6004dt8q.pdf pdf_icon

ZXMS6004DT8

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto... See More ⇒

 5.1. Size:479K  diodes
 zxms6004dg.pdf pdf_icon

ZXMS6004DT8

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-... See More ⇒

 5.2. Size:425K  diodes
 zxms6004dgq.pdf pdf_icon

ZXMS6004DT8

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P... See More ⇒

SHOW MORE

Detailed specifications: 2SK3112, 2SK3114B, BSP75G, BSP75N, ZXMS6001N3, ZXMS6002G, ZXMS6003G, ZXMS6004DG, CS150N03A8, ZXMS6004FF, ZXMS6004SG, ZXMS6005DG, ZXMS6005DT8, ZXMS6005SG, ZXMS6006DG, ZXMS6006DT8, ZXMS6006SG

Keywords - ZXMS6004DT8 MOSFET specs

 ZXMS6004DT8 cross reference

 ZXMS6004DT8 equivalent finder

 ZXMS6004DT8 pdf lookup

 ZXMS6004DT8 substitution

 ZXMS6004DT8 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.