2SK4197LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK4197LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 28 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 3.3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 5 V
Carga de compuerta (Qg): 11 nC
Resistencia drenaje-fuente RDS(on): 2.5 Ohm
Empaquetado / Estuche: TO220FI
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2SK4197LS Datasheet (PDF)
1.1. 2sk4197ls.pdf 
Size:68K _sanyo
Ordering number : ENA1223 2SK4197LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute M
3.1. 2sk4197fs.pdf Size:267K _sanyo
2SK4197FS Ordering number : ENA1368A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FS Applications Features High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VG
3.2. 2sk4197fg.pdf Size:321K _sanyo
2SK4197FG Ordering number : ENA1367 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FG Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications at Ta=25
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