2SK4197LS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK4197LS
Маркировка: K4197
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 11 nC
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 50 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.25 Ohm
Тип корпуса: TO220FI
2SK4197LS Datasheet (PDF)
2sk4197ls.pdf
Ordering number : ENA1223 2SK4197LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4197LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4197ls.pdf
isc N-Channel MOSFET Transistor 2SK4197LSFEATURESDrain Current : I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 3.25(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4197fs.pdf
2SK4197FSOrdering number : ENA1368ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4197FSApplicationsFeatures High-speed switching. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source
2sk4197fg.pdf
2SK4197FGOrdering number : ENA1367SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4197FGApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4193ls.pdf
2SK4193LSOrdering number : ENA1371SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4193LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4195ls.pdf
Ordering number : ENA1232 2SK4195LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4195LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4194ls.pdf
2SK4194LSOrdering number : ENA1372SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4194LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4198ls.pdf
2SK4198LSOrdering number : ENA1171ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4198LSApplicationsFeatures ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF(typ.) 10V drive Repetitive avalanche guaranteeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Uni
2sk4192ls.pdf
2SK4192LSOrdering number : ENA1413SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4192LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4191ls.pdf
Ordering number : ENA1206 2SK41911LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4191LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4196ls.pdf
Ordering number : ENA1233 2SK4196LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4196LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4199ls.pdf
2SK4199LSOrdering number : ENA1332SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4199LSApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.Specifications
2sk4198fs.pdf
2SK4198FSOrdering number : ENA1370BSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4198FSApplicationsFeatures ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guaranteeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Un
2sk4198fg.pdf
2SK4198FGOrdering number : ENA1369ASANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4198FGApplicationsFeatures ON-resistance RDS(on)=1.8 (typ.) Input capacitance Ciss=360pF (typ.) 10V drive Repetitive avalanche guaranteeSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings Un
2sk4193ls.pdf
isc N-Channel MOSFET Transistor 2SK4193LSFEATURESDrain Current : I = 4.5A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.95(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4195ls.pdf
isc N-Channel MOSFET Transistor 2SK4195LSFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 2.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4194ls.pdf
isc N-Channel MOSFET Transistor 2SK4194LSFEATURESDrain Current : I = 6.0A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk4198ls.pdf
isc N-Channel MOSFET Transistor 2SK4198LSFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.34(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4192ls.pdf
isc N-Channel MOSFET Transistor 2SK4192LSFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.04(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4191ls.pdf
isc N-Channel MOSFET Transistor 2SK4191LSFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.56(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4196ls.pdf
isc N-Channel MOSFET Transistor 2SK4196LSFEATURESDrain Current : I = 5.0A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.56(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sol
2sk4199ls.pdf
isc N-Channel MOSFET Transistor 2SK4199LSFEATURESDrain Current : I = 3.0A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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