2SK4197LS MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK4197LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 28 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 3.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 11 nC
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO220FI
2SK4197LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK4197LS Datasheet (PDF)
1.1. 2sk4197ls.pdf 
Size:68K _sanyo
Ordering number : ENA1223 2SK4197LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197LS Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute M
3.1. 2sk4197fs.pdf Size:267K _sanyo
2SK4197FS Ordering number : ENA1368A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FS Applications Features High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 V Gate-to-Source Voltage VG
3.2. 2sk4197fg.pdf Size:321K _sanyo
2SK4197FG Ordering number : ENA1367 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4197FG Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications at Ta=25
Datasheet: 2SK4099LS , 2SK4116LS , 2SK4117LS , 2SK4124 , 2SK4125 , 2SK4126 , 2SK4177 , 2SK4196LS , IRF540 , 2SK4198LS , 2SK4209 , 2SK4210 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M .
