3LP01S Todos los transistores

 

3LP01S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3LP01S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 5.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 10.4 Ohm
   Paquete / Cubierta: SMCP
     - Selección de transistores por parámetros

 

3LP01S Datasheet (PDF)

 ..1. Size:48K  sanyo
 3lp01s.pdf pdf_icon

3LP01S

Ordering number : EN6681A3LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS

 0.1. Size:250K  sanyo
 3lp01ss.pdf pdf_icon

3LP01S

Ordering number : EN6648A3LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SSApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10

 0.2. Size:28K  sanyo
 3lp01sp.pdf pdf_icon

3LP01S

Ordering number : ENN66473LP01SPP-Channel Silicon MOSFET3LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[3LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications 3.03.8nom SANYO : SPAAbsolute Maximum Ratings at Ta=25CP

 0.3. Size:310K  cystek
 mtp3lp01s3.pdf pdf_icon

3LP01S

Spec. No. : 794N3 Issued Date : 2011.03.14 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3

MOSTRAR MÁS

Otros transistores... 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C , 3LP01M , IRF3710 , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 .

History: RFT3055LE | SSF3018D | AT2N60S | 2SK2900-01 | AOW418 | WVM13N50 | NCE1540AF

 

 
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