3LP01S - аналоги, параметры транзистора - Справочник транзисторов

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Ordering number EN6681A 3LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS

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Ordering number EN6648A 3LP01SS SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01SS Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10

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Ordering number ENN6647 3LP01SP P-Channel Silicon MOSFET 3LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [3LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C P

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Spec. No. 794N3 Issued Date 2011.03.14 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3 @-4V 4.6 @-2.5V RDSON(typ) 10.9 @-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3

Другие MOSFET... 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C , 3LP01M , IRFP260N , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 .