3LP01S Datasheet and Replacement
Type Designator: 3LP01S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 5.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 10.4 Ohm
Package: SMCP
3LP01S substitution
3LP01S Datasheet (PDF)
3lp01s.pdf

Ordering number : EN6681A3LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS
3lp01ss.pdf

Ordering number : EN6648A3LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SSApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10
3lp01sp.pdf

Ordering number : ENN66473LP01SPP-Channel Silicon MOSFET3LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[3LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications 3.03.8nom SANYO : SPAAbsolute Maximum Ratings at Ta=25CP
mtp3lp01s3.pdf

Spec. No. : 794N3 Issued Date : 2011.03.14 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Keywords - 3LP01S MOSFET datasheet
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History: FQI4N80 | IRFW520A



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