ATP102 Todos los transistores

 

ATP102 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ATP102

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 135 nS

Cossⓘ - Capacitancia de salida: 360 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0185 Ohm

Encapsulados: ATPAK

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ATP102 datasheet

 ..1. Size:268K  sanyo
 atp102.pdf pdf_icon

ATP102

ATP102 Ordering number ENA1479 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP102 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 9.1. Size:469K  sanyo
 atp107.pdf pdf_icon

ATP102

ATP107 Ordering number ENA1603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP107 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 9.2. Size:467K  sanyo
 atp101.pdf pdf_icon

ATP102

ATP101 Ordering number ENA1646 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP101 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

 9.3. Size:268K  sanyo
 atp104.pdf pdf_icon

ATP102

ATP104 Ordering number ENA1406 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP104 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS

MOSTRAR MÁS

Otros transistores... 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , 2N7000 , ATP103 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 .

History: 5LN01SS

 

 

 


 
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