All MOSFET. ATP102 Datasheet

 

ATP102 MOSFET. Datasheet pdf. Equivalent

Type Designator: ATP102

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 40 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: ATPAK

ATP102 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATP102 Datasheet (PDF)

1.1. atp102.pdf Size:268K _sanyo

ATP102
ATP102

ATP102 Ordering number : ENA1479 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP102 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.1. atp106.pdf Size:470K _sanyo

ATP102
ATP102

ATP106 Ordering number : ENA1597 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP106 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.2. atp103.pdf Size:469K _sanyo

ATP102
ATP102

ATP103 Ordering number : ENA1623 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP103 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.3. atp108.pdf Size:469K _sanyo

ATP102
ATP102

ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP108 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.4. atp107.pdf Size:469K _sanyo

ATP102
ATP102

ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP107 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-

5.5. atp101.pdf Size:467K _sanyo

ATP102
ATP102

ATP101 Ordering number : ENA1646 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP101 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

5.6. atp104.pdf Size:268K _sanyo

ATP102
ATP102

ATP104 Ordering number : ENA1406 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ATP104 Applications Features Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-

Datasheet: 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , IRFB3306 , ATP103 , ATP104 , ATP106 , ATP107 , ATP108 , ATP112 , ATP113 , ATP114 .

 


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