EC3A03B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EC3A03B
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.001 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 20000 Ohm
Encapsulados: ECSP1006-3
Búsqueda de reemplazo de EC3A03B MOSFET
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EC3A03B datasheet
ec3a03b.pdf
Ordering number ENN7295A EC3A03B N-Channel Silicon Junction FET EC3A03B Impedance Converter, Infrared Sensor Applications Preliminary Features Package Dimensions Small IGSS. unit mm Small Ciss. 2208 Ultraminiature package facilitates miniaturization in [EC3A03B] end products. 0.35 0.2 0.15 0.15 0.05 2 1 3 0.05 0.5 (Bottom View) 1 Source 2 Drain 3 G
ec3a01b.pdf
Ordering number ENN6612 EC3A01B N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features Package Dimensions Ultrasmall (1006 size), thin (0.5mm) leadless package. unit mm Especially suited for use in audio, telephone capacitor 2188 microphones. [EC3A01B] Excellent voltage characteristics. 0.35 Excellent transient characteristics. 0.2
ec3a04b.pdf
Ordering number ENA0509B EC3A04B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, EC3A04B Impedance Converter Applications Applicatins Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization
Otros transistores... CPH6337 , CPH6341 , CPH6347 , CPH6350 , CPH6442 , CPH6443 , CPH6444 , CPH6445 , IRFB31N20D , EC3A04B , EC4401C , ECH8308 , ECH8309 , ECH8310 , ECH8315 , ECH8320 , ECH8410 .
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