All MOSFET. EC3A03B Datasheet

 

EC3A03B MOSFET. Datasheet pdf. Equivalent


   Type Designator: EC3A03B
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Id|ⓘ - Maximum Drain Current: 0.001 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 20000 Ohm
   Package: ECSP1006-3

 EC3A03B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

EC3A03B Datasheet (PDF)

 ..1. Size:33K  sanyo
 ec3a03b.pdf

EC3A03B EC3A03B

Ordering number : ENN7295AEC3A03BN-Channel Silicon Junction FETEC3A03BImpedance Converter,Infrared Sensor ApplicationsPreliminaryFeatures Package Dimensions Small IGSS. unit : mm Small Ciss. 2208 Ultraminiature package facilitates miniaturization in[EC3A03B]end products.0.350.20.15 0.150.052130.050.5(Bottom View)1 : Source2 : Drain3 : G

 9.1. Size:30K  sanyo
 ec3a01b.pdf

EC3A03B EC3A03B

Ordering number : ENN6612EC3A01BN-Channel Silicon Junction FETEC3A01BCapacitor Microphone ApplicationsFeaturesPackage Dimensions Ultrasmall (1006 size), thin (0.5mm) leadless package.unit : mm Especially suited for use in audio, telephone capacitor2188microphones.[EC3A01B] Excellent voltage characteristics.0.35 Excellent transient characteristics.0.2

 9.2. Size:82K  sanyo
 ec3a04b.pdf

EC3A03B EC3A03B

Ordering number : ENA0509B EC3A04BSANYO SemiconductorsDATA SHEETN-Channel Junction Silicon FETLow-Frequency General-Purpose Amplifier,EC3A04BImpedance Converter ApplicationsApplicatins Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.Features Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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