ECH8308 Todos los transistores

 

ECH8308 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ECH8308

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: ECH8

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ECH8308 datasheet

 ..1. Size:268K  sanyo
 ech8308.pdf pdf_icon

ECH8308

Ordering number ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8308 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -

 8.1. Size:35K  sanyo
 ech8302.pdf pdf_icon

ECH8308

Ordering number ENN8247 ECH8302 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8302 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --7 A Drain Current (Pulse) IDP PW

 8.2. Size:36K  sanyo
 ech8304.pdf pdf_icon

ECH8308

Ordering number ENN8255 ECH8304 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8304 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 9 V Drain Current (DC) ID

 8.3. Size:36K  sanyo
 ech8305.pdf pdf_icon

ECH8308

Ordering number ENN8145 ECH8305 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8305 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW 1

MOSTRAR MÁS

Otros transistores... CPH6350 , CPH6442 , CPH6443 , CPH6444 , CPH6445 , EC3A03B , EC3A04B , EC4401C , 7N60 , ECH8309 , ECH8310 , ECH8315 , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M .

 

 

 


 
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