ECH8308 MOSFET Datasheet: P-Ch, 12V, 10A. Full specification with pinout and replacement list

ECH8308 Specs and Replacement

Type Designator: ECH8308

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: ECH8

ECH8308 substitution

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ECH8308 datasheet

..1. Size:268K sanyo
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Ordering number ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8308 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS -... See More ⇒

8.1. Size:35K sanyo
ech8302.pdf pdf_icon

Ordering number ENN8247 ECH8302 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8302 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --7 A Drain Current (Pulse) IDP PW ... See More ⇒

8.2. Size:36K sanyo
ech8304.pdf pdf_icon

Ordering number ENN8255 ECH8304 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8304 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 9 V Drain Current (DC) ID ... See More ⇒

8.3. Size:36K sanyo
ech8305.pdf pdf_icon

Ordering number ENN8145 ECH8305 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8305 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --4 A Drain Current (Pulse) IDP PW 1... See More ⇒