ECH8310 Todos los transistores

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ECH8310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ECH8310

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.013 Ohm

Empaquetado / Estuche: ECH8

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ECH8310 Datasheet (PDF)

1.1. ech8310.pdf Size:284K _sanyo

ECH8310
ECH8310

ECH8310 Ordering number : ENA1430 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8310 Applications Features 4V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --9 A

4.1. ech8315.pdf Size:285K _sanyo

ECH8310
ECH8310

ECH8315 Ordering number : ENA1387 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8315 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain

5.1. ech8320.pdf Size:286K _sanyo

ECH8310
ECH8310

ECH8320 Ordering number : ENA1429 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8320 Applications Features Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 10 V Dra

5.2. ech8308.pdf Size:268K _sanyo

ECH8310
ECH8310

Ordering number : ENA1182 ECH8308 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8308 Applications Features Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-

5.3. ech8309.pdf Size:285K _sanyo

ECH8310
ECH8310

ECH8309 Ordering number : ENA1418A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8309 Applications Features 1.8V drive. Halogen free compliance. Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --

Otros transistores... CPH6443 , CPH6444 , CPH6445 , EC3A03B , EC3A04B , EC4401C , ECH8308 , ECH8309 , IRFP260M , ECH8315 , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M , ECH8649 , ECH8651R .

 


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Introduzca al menos 1 números o letras