ECH8310 Todos los transistores

 

ECH8310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ECH8310
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: ECH8
     - Selección de transistores por parámetros

 

ECH8310 Datasheet (PDF)

 ..1. Size:284K  sanyo
 ech8310.pdf pdf_icon

ECH8310

ECH8310Ordering number : ENA1430SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8310ApplicationsFeatures 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)

 8.1. Size:285K  sanyo
 ech8315.pdf pdf_icon

ECH8310

ECH8315Ordering number : ENA1387SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8315ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS

 9.1. Size:286K  sanyo
 ech8320.pdf pdf_icon

ECH8310

ECH8320Ordering number : ENA1429SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8320ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

 9.2. Size:35K  sanyo
 ech8302.pdf pdf_icon

ECH8310

Ordering number : ENN8247ECH8302P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8302ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --7 ADrain Current (Pulse) IDP PW

MOSTRAR MÁS

Otros transistores... CPH6443 , CPH6444 , CPH6445 , EC3A03B , EC3A04B , EC4401C , ECH8308 , ECH8309 , 2SK3918 , ECH8315 , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M , ECH8649 , ECH8651R .

History: 2SK736 | SVF7N60CF | IRF7309IPBF | 2N4869 | WFY3N02 | APT904R2AN | 2SK846

 

 
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