All MOSFET. ECH8310 Datasheet

 

ECH8310 Datasheet and Replacement


   Type Designator: ECH8310
   Marking Code: JM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: ECH8
 

 ECH8310 substitution

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ECH8310 Datasheet (PDF)

 ..1. Size:284K  sanyo
 ech8310.pdf pdf_icon

ECH8310

ECH8310Ordering number : ENA1430SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8310ApplicationsFeatures 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)

 8.1. Size:285K  sanyo
 ech8315.pdf pdf_icon

ECH8310

ECH8315Ordering number : ENA1387SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8315ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS

 9.1. Size:286K  sanyo
 ech8320.pdf pdf_icon

ECH8310

ECH8320Ordering number : ENA1429SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8320ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

 9.2. Size:35K  sanyo
 ech8302.pdf pdf_icon

ECH8310

Ordering number : ENN8247ECH8302P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8302ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --7 ADrain Current (Pulse) IDP PW

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Datasheet: CPH6443 , CPH6444 , CPH6445 , EC3A03B , EC3A04B , EC4401C , ECH8308 , ECH8309 , STP65NF06 , ECH8315 , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M , ECH8649 , ECH8651R .

History: MDF13N50GTH | IRFN9130SMD

Keywords - ECH8310 MOSFET datasheet

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