ECH8310 MOSFET Datasheet: P-Ch, 30V, 9A. Full specification with pinout and replacement list

ECH8310 Specs and Replacement

Type Designator: ECH8310

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: ECH8

ECH8310 substitution

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ECH8310 datasheet

..1. Size:284K sanyo
ech8310.pdf pdf_icon

ECH8310 Ordering number ENA1430 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8310 Applications Features 4V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)... See More ⇒

8.1. Size:285K sanyo
ech8315.pdf pdf_icon

ECH8315 Ordering number ENA1387 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8315 Applications Features Low ON-resistance. 4V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ... See More ⇒

9.1. Size:286K sanyo
ech8320.pdf pdf_icon

ECH8320 Ordering number ENA1429 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8320 Applications Features Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ... See More ⇒

9.2. Size:35K sanyo
ech8302.pdf pdf_icon

Ordering number ENN8247 ECH8302 P-Channel Silicon MOSFET General-Purpose Switching Device ECH8302 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --7 A Drain Current (Pulse) IDP PW ... See More ⇒