ECH8660 Todos los transistores

 

ECH8660 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ECH8660

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.059 Ohm

Encapsulados: ECH8

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ECH8660 datasheet

 ..1. Size:494K  sanyo
ech8660.pdf pdf_icon

ECH8660

ECH8660 Ordering number ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8660 Applications Features The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Spe

 8.1. Size:65K  sanyo
ech8664r.pdf pdf_icon

ECH8660

Ordering number ENA1185 ECH8664R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8664R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

 8.2. Size:355K  sanyo
ech8667.pdf pdf_icon

ECH8660

ECH8667 Ordering number ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8667 Applications Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour

 8.3. Size:436K  sanyo
ech8661.pdf pdf_icon

ECH8660

ECH8661 Ordering number ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8661 Applications Features ON-resistance Nch RDS(on)1=18m (typ.), Pch ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

Otros transistores... ECH8649 , ECH8651R , ECH8652 , ECH8653 , ECH8654 , ECH8655R , ECH8657 , ECH8659 , IRF730 , ECH8661 , ECH8662 , ECH8663R , ECH8664R , ECH8667 , ECH8668 , ECH8673 , EFC4618R .

History: ECH8659 | FCB20N60F

 

 

 


 
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