ECH8660 MOSFET. Datasheet pdf. Equivalent
Type Designator: ECH8660
Marking Code: TF
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.4 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: ECH8
ECH8660 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ECH8660 Datasheet (PDF)
ech8660.pdf
ECH8660Ordering number : ENA1358BSANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8660ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free complianceSpe
ech8664r.pdf
Ordering number : ENA1185 ECH8664RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8664RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8667.pdf
ECH8667Ordering number : ENA1778SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8667ApplicationsFeatures ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour
ech8661.pdf
ECH8661Ordering number : ENA1777SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8661ApplicationsFeatures ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi
ech8668.pdf
ECH8668Ordering number : ENA1510SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8668ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance.
ech8663r.pdf
Ordering number : ENA1184 ECH8663RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8663RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8662.pdf
Ordering number : ENA1259 ECH8662SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8662ApplicationsFeatures Low ON-resistance. 2.5V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 40 VGate-to-Source Voltage VGSS 10
ech8667.pdf
Ordering number : ENA1778AECH8667P-Channel Power MOSFEThttp://onsemi.com 30V, 5.5A, 39m , Dual ECH8Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltag
ech8661.pdf
Ordering number : ENA1777AECH8661Power MOSFEThttp://onsemi.com 30V, 7A, 24m , 30V, 5.5A, 39m , Complementary Dual ECH8Features ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg hig
ech8668.pdf
Ordering number : ENA1510AECH8668Power MOSFEThttp://onsemi.com 20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8Features The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode inSp
Datasheet: ECH8649 , ECH8651R , ECH8652 , ECH8653 , ECH8654 , ECH8655R , ECH8657 , ECH8659 , IRFB3206 , ECH8661 , ECH8662 , ECH8663R , ECH8664R , ECH8667 , ECH8668 , ECH8673 , EFC4618R .
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