Справочник MOSFET. ECH8660

 

ECH8660 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ECH8660
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
   Тип корпуса: ECH8

 Аналог (замена) для ECH8660

 

 

ECH8660 Datasheet (PDF)

 ..1. Size:494K  sanyo
ech8660.pdf

ECH8660
ECH8660

ECH8660Ordering number : ENA1358BSANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8660ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free complianceSpe

 8.1. Size:65K  sanyo
ech8664r.pdf

ECH8660
ECH8660

Ordering number : ENA1185 ECH8664RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8664RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

 8.2. Size:355K  sanyo
ech8667.pdf

ECH8660
ECH8660

ECH8667Ordering number : ENA1778SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8667ApplicationsFeatures ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

 8.3. Size:436K  sanyo
ech8661.pdf

ECH8660
ECH8660

ECH8661Ordering number : ENA1777SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8661ApplicationsFeatures ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

 8.4. Size:369K  sanyo
ech8668.pdf

ECH8660
ECH8660

ECH8668Ordering number : ENA1510SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8668ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance.

 8.5. Size:73K  sanyo
ech8663r.pdf

ECH8660
ECH8660

Ordering number : ENA1184 ECH8663RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8663RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

 8.6. Size:67K  sanyo
ech8662.pdf

ECH8660
ECH8660

Ordering number : ENA1259 ECH8662SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8662ApplicationsFeatures Low ON-resistance. 2.5V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 40 VGate-to-Source Voltage VGSS 10

 8.7. Size:316K  onsemi
ech8667.pdf

ECH8660
ECH8660

Ordering number : ENA1778AECH8667P-Channel Power MOSFEThttp://onsemi.com 30V, 5.5A, 39m , Dual ECH8Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltag

 8.8. Size:419K  onsemi
ech8661.pdf

ECH8660
ECH8660

Ordering number : ENA1777AECH8661Power MOSFEThttp://onsemi.com 30V, 7A, 24m , 30V, 5.5A, 39m , Complementary Dual ECH8Features ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg hig

 8.9. Size:385K  onsemi
ech8668.pdf

ECH8660
ECH8660

Ordering number : ENA1510AECH8668Power MOSFEThttp://onsemi.com 20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8Features The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode inSp

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