MCH6613 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH6613
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 5.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Encapsulados: MCPH6
Búsqueda de reemplazo de MCH6613 MOSFET
- Selecciónⓘ de transistores por parámetros
MCH6613 datasheet
mch6613.pdf
Ordering number ENN6920 MCH6613 N-Channel and P-Channel Silicon MOSFETs MCH6613 Ultrahigh-Speed Switching Applications Features Package Dimensions The MCH6613 incorporates an N-channel MOSFET unit mm and a P-channel MOSFET that feature low ON- 2173A resistance and high-speed switching, thereby enabling [MCH6613] high-density mounting. 0.3 0.15 Excellent ON-resistance ch
mch6613.pdf
Ordering number EN6920C MCH6613 Power MOSFET http //onsemi.com 30V, 0.35A, 3.7 30V, 0.2A, 10.4 , Complementary Dual MCPH6 Features The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V
mch6619.pdf
Ordering number ENN7156 MCH6619 P-Channel Silicon MOSFET MCH6619 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 4V drive. [MCH6619] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitaing high-density mounting. 4 5 6 3 2 1 0.65 1 Source1 6 5 4 2.0 2
mch6611.pdf
Ordering number ENN7077 MCH6611 P-Channel Silicon MOSFET MCH6611 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 4V drive. [MCH6611] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitating high-density mounting. 4 5 6 3 2 1 1 Source1 0.65
Otros transistores... MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 , MCH6601 , MCH6602 , MCH6604 , IRF530 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L .
History: PV551BA
History: PV551BA
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
Popular searches
mrf450 | oc70 transistor | p0603bd mosfet | p157r5nt | ptp03n04n | sm4377 mosfet datasheet | tip31c reemplazo | 2sa906
