MCH6613 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH6613
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 5.9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Paquete / Cubierta: MCPH6
- Selección de transistores por parámetros
MCH6613 Datasheet (PDF)
mch6613.pdf

Ordering number : ENN6920MCH6613N-Channel and P-Channel Silicon MOSFETsMCH6613Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions The MCH6613 incorporates an N-channel MOSFET unit : mmand a P-channel MOSFET that feature low ON- 2173Aresistance and high-speed switching, thereby enabling[MCH6613]high-density mounting.0.30.15 Excellent ON-resistance ch
mch6613.pdf

Ordering number : EN6920CMCH6613Power MOSFEThttp://onsemi.com 30V, 0.35A, 3.7 30V, 0.2A, 10.4 , Complementary Dual MCPH6Features The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V
mch6619.pdf

Ordering number : ENN7156MCH6619P-Channel Silicon MOSFETMCH6619Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive.[MCH6619] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source16 5 42.0 2
mch6611.pdf

Ordering number : ENN7077MCH6611P-Channel Silicon MOSFETMCH6611Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive.[MCH6611] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 11 : Source10.65
Otros transistores... MCH6431 , MCH6436 , MCH6437 , MCH6444 , MCH6445 , MCH6601 , MCH6602 , MCH6604 , IRF530 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L .
History: IRLZ24NL | BFC23 | AO4914 | SI4554DY | IRFR9220 | CEP840G | SIR496DP
History: IRLZ24NL | BFC23 | AO4914 | SI4554DY | IRFR9220 | CEP840G | SIR496DP



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