MCH6613 MOSFET. Datasheet pdf. Equivalent
Type Designator: MCH6613
Marking Code: FM
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 0.35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.58 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 5.9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
Package: MCPH6
MCH6613 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MCH6613 Datasheet (PDF)
mch6613.pdf
Ordering number : ENN6920MCH6613N-Channel and P-Channel Silicon MOSFETsMCH6613Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions The MCH6613 incorporates an N-channel MOSFET unit : mmand a P-channel MOSFET that feature low ON- 2173Aresistance and high-speed switching, thereby enabling[MCH6613]high-density mounting.0.30.15 Excellent ON-resistance ch
mch6613.pdf
Ordering number : EN6920CMCH6613Power MOSFEThttp://onsemi.com 30V, 0.35A, 3.7 30V, 0.2A, 10.4 , Complementary Dual MCPH6Features The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting Excellent ON-resistance characteristic 1.5V
mch6619.pdf
Ordering number : ENN7156MCH6619P-Channel Silicon MOSFETMCH6619Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive.[MCH6619] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.651 : Source16 5 42.0 2
mch6611.pdf
Ordering number : ENN7077MCH6611P-Channel Silicon MOSFETMCH6611Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive.[MCH6611] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 11 : Source10.65
mch6610.pdf
Ordering number : ENN7042MCH6610N-Channel Silicon MOSFETMCH6610Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6610] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 10.651 : Source
mch6616.pdf
Ordering number : ENN7013MCH6616N-Channel Silicon MOSFETMCH6616Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6616] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 1 1 : Source12 : Gate10.65
mch6615.pdf
Ordering number : ENN6796MCH6615N-Channel and P-Channel Silicon MOSFETsMCH6615Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions The MCH6615 incorporates two elements in the same unit : mmpackage which are N-channel and P-channel low 2173ON resistance and high-speed switching MOSFETs,[MCH6615]thereby enabling high-density mounting.0.3 0.15 Low ON-res
mch6618.pdf
Ordering number : ENN6973MCH6618N-Channel and P-Channel Silicon MOSFETsMCH6618Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions The MCH6618 encapsulates an N-channel MOSFET unit : mmand a P-channel MOSFET that feature low 2173AON-resistance and ultrahigh switching-speed, thus[MCH6618]allows high-density mounting.0.30.15 Low ON-resistance.4 5 6
mch6614.pdf
Ordering number : ENN6795MCH6614N-Channel and P-Channel Silicon MOSFETMCH6614Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions The MCH6614 incorporates two elements that are an unit : mmN-channel and a P-channel MOSFETs that feature low 2173ON resistance and high-speed switching, thereby[MCH6614]enabling high-density mounting.0.3 0.15 Low ON-resista
mch6612.pdf
Ordering number : ENN7078MCH6612N-Channel Silicon MOSFETMCH6612Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 4V drive.[MCH6612] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 11 : Source10.65
mch6617.pdf
Ordering number : ENN6969MCH6617P-Channel Silicon MOSFETMCH6617Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6617] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitaing high-density mounting.4 5 63 2 10.65 1 : Source1
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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