MMBF0201NL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBF0201NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 25 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: SOT23
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MMBF0201NL datasheet
mmbf0201nl mvmbf0201nl.pdf
MMBF0201NL, MVMBF0201NL Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23 www.onsemi.com These miniature surface mount MOSFETs low RDS(on) assure 300 mAMPS - 20 VOLTS minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are RDS(on) = 1 W dc-dc converters, power management in portable and battery-powered
mmbf0201nlt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF0201NLT1/D MMBF0201NLT1 Low rDS(on) Small-Signal MOSFETs Motorola Preferred Device TMOS Single N-Channel Field Effect Transistors N CHANNEL ENHANCEMENT MODE Part of the GreenLine Portfolio of devices with energy con- TMOS MOSFET serving traits. rDS(on) = 1.0 OHM These miniature surface mount MOSFETs ut
mmbf0201nlt1-d.pdf
MMBF0201NLT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure http //onsemi.com minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are 300 mAMPS - 20 VOLTS dc-dc converters, power management in portable and RDS(on) = 1 W battery
mmbf0201nlt1g.pdf
MMBF0201NLT1G www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC
Otros transistores... MCH6601 , MCH6602 , MCH6604 , MCH6613 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , MLD1N06CL , IRFP450 , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L .
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