All MOSFET. MMBF0201NL Datasheet

 

MMBF0201NL Datasheet and Replacement


   Type Designator: MMBF0201NL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: SOT23
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MMBF0201NL Datasheet (PDF)

 ..1. Size:164K  onsemi
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MMBF0201NL

MMBF0201NL,MVMBF0201NLPower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23www.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assure300 mAMPS - 20 VOLTSminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications areRDS(on) = 1 Wdc-dc converters, power management in portable andbattery-powered

 0.1. Size:140K  motorola
mmbf0201nlt1.pdf pdf_icon

MMBF0201NL

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF0201NLT1/DMMBF0201NLT1Low rDS(on) Small-Signal MOSFETsMotorola Preferred DeviceTMOS Single N-ChannelField Effect TransistorsNCHANNELENHANCEMENTMODEPart of the GreenLine Portfolio of devices with energycon-TMOS MOSFETserving traits.rDS(on) = 1.0 OHMThese miniature surface mount MOSFETs ut

 0.2. Size:62K  onsemi
mmbf0201nlt1-d.pdf pdf_icon

MMBF0201NL

MMBF0201NLT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS - 20 VOLTSdc-dc converters, power management in portable andRDS(on) = 1 Wbattery

 0.3. Size:878K  cn vbsemi
mmbf0201nlt1g.pdf pdf_icon

MMBF0201NL

MMBF0201NLT1Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC

Datasheet: MCH6601 , MCH6602 , MCH6604 , MCH6613 , MGSF1N02L , MGSF1N03L , MGSF2N02EL , MLD1N06CL , IRFB3607 , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , MMBFJ175L , MMBFJ177L , MMBFJ309L .

History: IPG16N10S4-61A | STK801 | SFU2955 | 2SK113Y | ITF87008DQT | LSE50R160HT | KNF7650A

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