MTP50P03HDL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MTP50P03HDL
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 340 nS
Cossⓘ - Capacitancia de salida: 1550 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: TO220AB
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MTP50P03HDL Datasheet (PDF)
mtp50p03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta
mtp50p03hdlrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta
mtp50p03hdl-d mtp50p03hdlg.pdf
MTP50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,50 AMPERES, 30
mtp50p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918