MTP50P03HDL. Аналоги и основные параметры
Наименование производителя: MTP50P03HDL
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 15 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 340 ns
Cossⓘ - Выходная емкость: 1550 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TO220AB
Аналог (замена) для MTP50P03HDL
- подборⓘ MOSFET транзистора по параметрам
MTP50P03HDL даташит
mtp50p03hdl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta
mtp50p03hdlrev2.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta
mtp50p03hdl-d mtp50p03hdlg.pdf
MTP50P03HDL Preferred Device Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, 50 AMPERES, 30
mtp50p03hd.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50P03HDL/D Designer's Data Sheet MTP50P03HDL HDTMOS E-FET. Motorola Preferred Device Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS POWER FET LOGIC LEVEL This advanced high cell density HDTMOS power FET is 50 AMPERES designed to withstand high energy in the avalanche and commuta
Другие MOSFET... MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , 75N75 , MTW32N20E , NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , NCV8406 , NCV8440 .
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: ASA60R150E | ASA60R090EFDA | ASA60R090EFD | ASA50R130E | ADW120N080G2 | ADQ120N080G2 | ADG120N080G2 | AS6004 | 2N7002EY | AS2310A | 2N7002KM | 2N7002KH | AON5802 | AOSS62934 | AOSN21319C | AONS66966
Popular searches
g40t60an3h datasheet | j5027-r datasheet | transistor a1015 datasheet | bf199 transistor equivalent | bu801 | c8550 transistor datasheet | mj21194 transistor datasheet | kep40n26




