MTP50P03HDL MOSFET. Datasheet pdf. Equivalent
Type Designator: MTP50P03HDL
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 74 nC
trⓘ - Rise Time: 340 nS
Cossⓘ - Output Capacitance: 1550 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO220AB
MTP50P03HDL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTP50P03HDL Datasheet (PDF)
mtp50p03hdl.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta
mtp50p03hdlrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta
mtp50p03hdl-d mtp50p03hdlg.pdf
MTP50P03HDLPreferred DevicePower MOSFET50 Amps, 30 Volts, Logic LevelP-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power supplies,50 AMPERES, 30
mtp50p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP50P03HDL/DDesigner's Data SheetMTP50P03HDLHDTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETLOGIC LEVELThis advanced highcell density HDTMOS power FET is50 AMPERESdesigned to withstand high energy in the avalanche and commuta
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRLR024A
History: IRLR024A
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