NDD04N50Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDD04N50Z
Código: 4N50ZG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 61 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 12 nC
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 43 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Paquete / Cubierta: DPAK IPAK
Búsqueda de reemplazo de NDD04N50Z MOSFET
NDD04N50Z Datasheet (PDF)
ndd04n50z.pdf

NDD04N50ZN-Channel Power MOSFET500 V, 2.7 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V2.7 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit
ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60ZPower MOSFET, N-Channel, 600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParam
ndf04n60z ndp04n60z ndd04n60z.pdf

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS
ndf04n60z ndd04n60z.pdf

NDF04N60Z, NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant650 V2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParamete
Otros transistores... NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , IRF9640 , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z .



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