NDD04N50Z Todos los transistores

 

NDD04N50Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDD04N50Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 61 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 12 nC

Resistencia drenaje-fuente RDS(on): 2.3 Ohm

Empaquetado / Estuche: DPAK, IPAK

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NDD04N50Z Datasheet (PDF)

4.1. ndf04n60z ndp04n60z ndd04n60z.pdf Size:148K _1

NDD04N50Z
NDD04N50Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http://onsemi.com • Low ON Resistance • Low Gate Charge • 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A • These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Ω Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

4.2. ndf04n60z ndp04n60z ndd04n60z.pdf Size:130K _onsemi

NDD04N50Z
NDD04N50Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features http://onsemi.com • Low ON Resistance • Low Gate Charge • ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 2 A • 100% Avalanche Tested 600 V 2.0 Ω • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) D (

 

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