NDD04N50Z Todos los transistores

 

NDD04N50Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDD04N50Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 43 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
   Paquete / Cubierta: DPAK IPAK

 Búsqueda de reemplazo de MOSFET NDD04N50Z

 

NDD04N50Z Datasheet (PDF)

 ..1. Size:118K  onsemi
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NDD04N50Z

NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W Features Low ON Resistance Low Gate Charge http //onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS RDS(on) (MAX) @ 1.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 500 V 2.7 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Rating Symbol Value Unit

 8.1. Size:291K  1
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NDD04N50Z

NDF04N60Z, NDD04N60Z Power MOSFET, N-Channel, 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Param

 8.2. Size:148K  1
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NDD04N50Z

NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 1.8 W, 600 Volts Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant 600 V 1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts 4 ABSOLUTE MAXIMUM RATINGS

 8.3. Size:136K  onsemi
ndf04n60z ndd04n60z.pdf pdf_icon

NDD04N50Z

NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested VDSS (@ TJmax) RDS(on) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 650 V 2.0 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel Paramete

Otros transistores... NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , K2611 , NDD04N60Z , FDME910PZT , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z .

 

 
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