All MOSFET. NDD04N50Z Datasheet

 

NDD04N50Z MOSFET. Datasheet pdf. Equivalent

Type Designator: NDD04N50Z

Marking Code: 4N50ZG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 61 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 3.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 43 pF

Maximum Drain-Source On-State Resistance (Rds): 2.7 Ohm

Package: DPAK IPAK

NDD04N50Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDD04N50Z Datasheet (PDF)

0.1. ndd04n50z.pdf Size:118K _onsemi

NDD04N50Z
NDD04N50Z

NDD04N50ZN-Channel Power MOSFET500 V, 2.7 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(on) (MAX) @ 1.5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant500 V2.7 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelRating Symbol Value Unit

8.1. ndf04n60z ndp04n60z ndd04n60z.pdf Size:148K _1

NDD04N50Z
NDD04N50Z

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET1.8 W, 600 VoltsFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 2 A These Devices are Pb-Free and are RoHS Compliant600 V1.8 Applications Adapter (Notebook, Printer, Gaming) LCD Panel Power Lighting Ballasts4ABSOLUTE MAXIMUM RATINGS

8.2. ndf04n62z ndd04n62z.pdf Size:152K _onsemi

NDD04N50Z
NDD04N50Z

NDF04N62Z, NDD04N62ZN-Channel Power MOSFET620 V, 2.0 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 2 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant620 V2.0 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-ChannelParameter Symbol

 8.3. ndf04n60z ndp04n60z ndd04n60z.pdf Size:130K _onsemi

NDD04N50Z
NDD04N50Z

NDF04N60Z, NDP04N60Z,NDD04N60ZN-Channel Power MOSFET600 V, 2.0 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 2 A 100% Avalanche Tested600 V2.0 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (

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