FDME910PZT Todos los transistores

 

FDME910PZT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDME910PZT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 236 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: MICROFET1.6X1.6
 

 Búsqueda de reemplazo de FDME910PZT MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDME910PZT Datasheet (PDF)

 ..1. Size:260K  fairchild semi
 fdme910pzt.pdf pdf_icon

FDME910PZT

February 2015FDME910PZTP-Channel PowerTrench MOSFET-20 V, -8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 AIt features a MOSFET with low on-state resistance

 ..2. Size:425K  onsemi
 fdme910pzt.pdf pdf_icon

FDME910PZT

FDME910PZTP-Channel PowerTrench MOSFETGeneral Description-20 V, -8 A, 24 mThis device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.FeaturesIt features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Adiode protection against ESD. The MicroFET 1.6x1.6 T

 9.1. Size:229K  fairchild semi
 fdme905pt.pdf pdf_icon

FDME910PZT

October 2013FDME905PTP-Channel PowerTrench MOSFET -12 V, -8 A, 22 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 AIt features a MOSFET with low on-state resistance.

Otros transistores... NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , MMD60R360PRH , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z .

History: CEM4953 | BRA2N60 | STS3406 | STE40N55

 

 
Back to Top

 


 
.