All MOSFET. FDME910PZT Datasheet

 

FDME910PZT MOSFET. Datasheet pdf. Equivalent

Type Designator: FDME910PZT

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm

Package: UMLP1.6x1.6

FDME910PZT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDME910PZT Datasheet (PDF)

0.1. fdme910pzt.pdf Size:260K _fairchild_semi

FDME910PZT
FDME910PZT

February 2015 FDME910PZT P-Channel PowerTrench® MOSFET -20 V, -8 A, 24 mΩ Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A It features a MOSFET with low on-state resistance

9.1. fdme905pt.pdf Size:229K _fairchild_semi

FDME910PZT
FDME910PZT

October 2013 FDME905PT P-Channel PowerTrench® MOSFET -12 V, -8 A, 22 mΩ Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A It features a MOSFET with low on-state resistance.

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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