FDME910PZT
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDME910PZT
Marking Code: E91
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 236
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package: MICROFET1.6X1.6
FDME910PZT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDME910PZT
Datasheet (PDF)
..1. Size:260K fairchild semi
fdme910pzt.pdf
February 2015FDME910PZTP-Channel PowerTrench MOSFET-20 V, -8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 AIt features a MOSFET with low on-state resistance
..2. Size:425K onsemi
fdme910pzt.pdf
FDME910PZTP-Channel PowerTrench MOSFETGeneral Description-20 V, -8 A, 24 mThis device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.FeaturesIt features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Adiode protection against ESD. The MicroFET 1.6x1.6 T
9.1. Size:229K fairchild semi
fdme905pt.pdf
October 2013FDME905PTP-Channel PowerTrench MOSFET -12 V, -8 A, 22 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 AIt features a MOSFET with low on-state resistance.
Datasheet: NCV8406
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