FDME910PZT Datasheet and Replacement
Type Designator: FDME910PZT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 236 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: MICROFET1.6X1.6
FDME910PZT substitution
FDME910PZT Datasheet (PDF)
fdme910pzt.pdf

February 2015FDME910PZTP-Channel PowerTrench MOSFET-20 V, -8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 AIt features a MOSFET with low on-state resistance
fdme910pzt.pdf

FDME910PZTP-Channel PowerTrench MOSFETGeneral Description-20 V, -8 A, 24 mThis device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications.FeaturesIt features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 Adiode protection against ESD. The MicroFET 1.6x1.6 T
fdme905pt.pdf

October 2013FDME905PTP-Channel PowerTrench MOSFET -12 V, -8 A, 22 mFeatures General DescriptionThis device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 AIt features a MOSFET with low on-state resistance.
Datasheet: NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , MMD60R360PRH , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z .
History: TMD3N90
Keywords - FDME910PZT MOSFET datasheet
FDME910PZT cross reference
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FDME910PZT replacement
History: TMD3N90



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