FDME910PZT - аналоги, параметры транзистора - Справочник транзисторов

FDME910PZT даташит

..1. Size:260K fairchild semi
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February 2015 FDME910PZT P-Channel PowerTrench MOSFET -20 V, -8 A, 24 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 31 m at VGS = -2.5 V, ID = -7 A It features a MOSFET with low on-state resistance

..2. Size:425K onsemi
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FDME910PZT P-Channel PowerTrench MOSFET General Description -20 V, -8 A, 24 m This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. Features It features a MOSFET with low on-state resistance and zener Max rDS(on) = 24 m at VGS = -4.5 V, ID = -8 A diode protection against ESD. The MicroFET 1.6x1.6 T

9.1. Size:229K fairchild semi
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October 2013 FDME905PT P-Channel PowerTrench MOSFET -12 V, -8 A, 22 m Features General Description This device is designed specifically for battery charging or load Max rDS(on) = 22 m at VGS = -4.5 V, ID = -8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 26 m at VGS = -2.5 V, ID = -7.3 A It features a MOSFET with low on-state resistance.

Другие MOSFET... NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z , NDD04N50Z , NDD04N60Z , RU7088R , NDD05N50Z , NDF02N60Z , NDF03N60Z , NDF04N60Z , FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z .