FDMA910PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMA910PZ
   Código: 910
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 21 nC
   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 414 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: MICROFET2X2

Búsqueda de reemplazo de MOSFET FDMA910PZ

FDMA910PZ Datasheet (PDF)

..1. Size:495K fairchild semi
fdma910pz.pdf

June 2014FDMA910PZSingle P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 Aapplications.It features a MOSFET with low on-state resist

9.1. Size:336K fairchild semi
fdma908pz.pdf

February 2014FDMA908PZSingle P-Channel PowerTrench MOSFET-12 V, -12 A, 12.5 mFeatures Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 AGeneral Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,

9.2. Size:500K fairchild semi
fdma905p.pdf

June 2014FDMA905PSingle P-Channel PowerTrench MOSFET -12 V, -10 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 Aapplications. It features a MOSFET with low on-state resista

9.3. Size:381K onsemi
fdma908pz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.4. Size:972K onsemi
fdma905p.pdf

9.5. Size:468K shenzhen
fdma905.pdf

Shenzhen Tuofeng Semiconductor Technology Co., LtdFDMA905NCE P-Channel Enhancement Mode Power MOSFET Description DThe FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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