FDMA910PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

June 2014 FDMA910PZ Single P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 A applications.It features a MOSFET with low on-state resist

February 2014 FDMA908PZ Single P-Channel PowerTrench MOSFET -12 V, -12 A, 12.5 m Features Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 A General Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,

June 2014 FDMA905P Single P-Channel PowerTrench MOSFET -12 V, -10 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resista

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description D The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic