FDMA910PZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMA910PZ
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.4 W
Предельно допустимое напряжение сток-исток (Uds): 20 V
Предельно допустимое напряжение затвор-исток (Ugs): 8 V
Пороговое напряжение включения Ugs(th): 1.5 V
Максимально допустимый постоянный ток стока (Id): 9.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 21 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: MLP2x2
FDMA910PZ Datasheet (PDF)
1.1. fdma910pz.pdf 
Size:495K _fairchild_semi
June 2014 FDMA910PZ Single P-Channel PowerTrench® MOSFET -20 V, -9.4 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A applications.It features a MOSFET with low on-state resist
5.1. fdma905p.pdf Size:500K _fairchild_semi
June 2014 FDMA905P Single P-Channel PowerTrench® MOSFET -12 V, -10 A, 16 mΩ Features General Description Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resista
5.2. fdma908pz.pdf Size:336K _fairchild_semi
February 2014 FDMA908PZ Single P-Channel PowerTrench® MOSFET -12 V, -12 A, 12.5 mΩ Features Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A General Description Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 mΩ at VGS = -1.8 V,
5.3. fdma905.pdf Size:468K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description D The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic
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