FDMA910PZ MOSFET. Datasheet pdf. Equivalent

June 2014FDMA910PZSingle P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 Aapplications.It features a MOSFET with low on-state resist

February 2014FDMA908PZSingle P-Channel PowerTrench MOSFET-12 V, -12 A, 12.5 mFeatures Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 AGeneral Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,

June 2014FDMA905PSingle P-Channel PowerTrench MOSFET -12 V, -10 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 Aapplications. It features a MOSFET with low on-state resista

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Shenzhen Tuofeng Semiconductor Technology Co., LtdFDMA905NCE P-Channel Enhancement Mode Power MOSFET Description DThe FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic