All MOSFET. FDMA910PZ Datasheet

 

FDMA910PZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMA910PZ

Marking Code: 910

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 414 pF

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: MICROFET2X2

FDMA910PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMA910PZ Datasheet (PDF)

0.1. fdma910pz.pdf Size:495K _fairchild_semi

FDMA910PZ
FDMA910PZ

June 2014FDMA910PZSingle P-Channel PowerTrench MOSFET -20 V, -9.4 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 m at VGS = -2.5 V, ID = -8.6 Aapplications.It features a MOSFET with low on-state resist

9.1. fdma905p.pdf Size:500K _fairchild_semi

FDMA910PZ
FDMA910PZ

June 2014FDMA905PSingle P-Channel PowerTrench MOSFET -12 V, -10 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 Aapplications. It features a MOSFET with low on-state resista

9.2. fdma908pz.pdf Size:336K _fairchild_semi

FDMA910PZ
FDMA910PZ

February 2014FDMA908PZSingle P-Channel PowerTrench MOSFET-12 V, -12 A, 12.5 mFeatures Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 AGeneral Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,

 9.3. fdma905.pdf Size:468K _shenzhen

FDMA910PZ
FDMA910PZ

Shenzhen Tuofeng Semiconductor Technology Co., LtdFDMA905NCE P-Channel Enhancement Mode Power MOSFET Description DThe FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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