All MOSFET. FDMA910PZ Datasheet

 

FDMA910PZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMA910PZ

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 9.4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 21 nC

Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm

Package: MLP2x2

FDMA910PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMA910PZ Datasheet (PDF)

0.1. fdma910pz.pdf Size:495K _fairchild_semi

FDMA910PZ
FDMA910PZ

June 2014 FDMA910PZ Single P-Channel PowerTrench® MOSFET -20 V, -9.4 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A applications.It features a MOSFET with low on-state resist

9.1. fdma905p.pdf Size:500K _fairchild_semi

FDMA910PZ
FDMA910PZ

June 2014 FDMA905P Single P-Channel PowerTrench® MOSFET -12 V, -10 A, 16 mΩ Features General Description Max rDS(on) = 16 mΩ at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 mΩ at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resista

9.2. fdma908pz.pdf Size:336K _fairchild_semi

FDMA910PZ
FDMA910PZ

February 2014 FDMA908PZ Single P-Channel PowerTrench® MOSFET -12 V, -12 A, 12.5 mΩ Features Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A General Description Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 mΩ at VGS = -1.8 V,

 9.3. fdma905.pdf Size:468K _shenzhen

FDMA910PZ
FDMA910PZ

Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description D The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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