NIMD6001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NIMD6001
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: SOIC8
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NIMD6001 Datasheet (PDF)
nimd6001n nimd6001an.pdf

NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50
nimd6001n.pdf

NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50
nimd6302r2.pdf

NIMD6302R2HDPlus Dual N-ChannelSelf-protected Field EffectTransistors with 1:200Current Mirror FEThttp://onsemi.comHDPlus devices are an advanced series of power MOSFET whichutilize ON Semiconductors latest MOSFET technology process toachieve the lowest possible on-resistance per silicon area while5.0 AMPERESincorporating smart features. They are capable of withstanding h
Otros transistores... NDF10N60Z , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 , NID6002N , NID9N05CL , NIF9N05CL , IRF640N , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N , NTA7002N , NTB25P06 , NTB35N15 , NTB45N06 .



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