NIMD6001
MOSFET. Datasheet pdf. Equivalent
Type Designator: NIMD6001
Marking Code: D6001N_D6001A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.3
nC
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11
Ohm
Package:
SOIC8
NIMD6001
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NIMD6001
Datasheet (PDF)
0.1. Size:197K onsemi
nimd6001n nimd6001an.pdf
NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50
0.2. Size:206K onsemi
nimd6001n.pdf
NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50
9.1. Size:158K onsemi
nimd6302r2.pdf
NIMD6302R2HDPlus Dual N-ChannelSelf-protected Field EffectTransistors with 1:200Current Mirror FEThttp://onsemi.comHDPlus devices are an advanced series of power MOSFET whichutilize ON Semiconductors latest MOSFET technology process toachieve the lowest possible on-resistance per silicon area while5.0 AMPERESincorporating smart features. They are capable of withstanding h
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