NIMD6001 MOSFET Datasheet: N-Ch, 60V, 3.3A. Full specification with pinout and replacement list

NIMD6001 Specs and Replacement

Type Designator: NIMD6001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOIC8

NIMD6001 substitution

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NIMD6001 datasheet

0.1. Size:197K onsemi
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NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling http //onsemi.com the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed 3.0 AMPERES approximately 50... See More ⇒

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NIMD6302R2 HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1 200 Current Mirror FET http //onsemi.com HDPlus devices are an advanced series of power MOSFET which utilize ON Semiconductor s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while 5.0 AMPERES incorporating smart features. They are capable of withstanding h... See More ⇒

Detailed specifications: NDF10N60Z, FDMS7678, NDF10N62Z, NDF11N50Z, NIC9N05TS1, NID6002N, NID9N05CL, NIF9N05CL, IRFB4110, FDD4N60NZ, NTA4001N, NTA4151P, NTA4153N, NTA7002N, NTB25P06, NTB35N15, NTB45N06