All MOSFET. NIMD6001 Datasheet

 

NIMD6001 Datasheet and Replacement


   Type Designator: NIMD6001
   Marking Code: D6001N_D6001A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.3 nC
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOIC8
 

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NIMD6001 Datasheet (PDF)

 0.1. Size:197K  onsemi
 nimd6001n nimd6001an.pdf pdf_icon

NIMD6001

NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50

 0.2. Size:206K  onsemi
 nimd6001n.pdf pdf_icon

NIMD6001

NIMD6001N, NIMD6001ANDual N-Channel Driver withDiagnostic Output60 V, 3 A, 110 mWNIMD6001N/AN is a dual 3 Amp low-side switch with anintegrated common disable input and drain diagnostic output. Pullinghttp://onsemi.comthe Disable pin low will override any applied gate voltages and turn offboth FET switches. Should either Drain-Source voltage exceed3.0 AMPERESapproximately 50

 9.1. Size:158K  onsemi
 nimd6302r2.pdf pdf_icon

NIMD6001

NIMD6302R2HDPlus Dual N-ChannelSelf-protected Field EffectTransistors with 1:200Current Mirror FEThttp://onsemi.comHDPlus devices are an advanced series of power MOSFET whichutilize ON Semiconductors latest MOSFET technology process toachieve the lowest possible on-resistance per silicon area while5.0 AMPERESincorporating smart features. They are capable of withstanding h

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History: IXFQ12N80P

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