NTD4806N Todos los transistores

 

NTD4806N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4806N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 76 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29.7 nS

Cossⓘ - Capacitancia de salida: 480 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: DPAK

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NTD4806N datasheet

 ..1. Size:124K  onsemi
ntd4806n.pdf pdf_icon

NTD4806N

NTD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 6.0 mW @ 10 V CPU Power Delivery 30 V 76 A 9.4 mW @ 4.5 V DC-DC Con

 0.1. Size:153K  onsemi
ntd4806n-1g.pdf pdf_icon

NTD4806N

NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 6.0 mW @

 8.1. Size:116K  onsemi
ntd4805n nvd4805n.pdf pdf_icon

NTD4806N

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q

 8.2. Size:150K  onsemi
ntd4809n-1g.pdf pdf_icon

NTD4806N

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V DC-DC Conv

Otros transistores... NTD3055-094 , NTD3055-150 , NTD3055L104 , NTD3055L170 , NTD40N03R , NTD4302 , NTD4804N , NTD4805N , CS150N03A8 , NTD4808N , NTD4809N , NTD4810N , NTD4813N , NTD4813NH , NTD4815N , NTD4855N , NTD4856N .

History: RUH120N35L

 

 

 


History: RUH120N35L

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