NTD4806N MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTD4806N
   Marking Code: 4806N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 76 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 29.7 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DPAK

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NTD4806N Datasheet (PDF)

..1. Size:124K onsemi
ntd4806n.pdf pdf_icon

NTD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications6.0 mW @ 10 V CPU Power Delivery30 V 76 A9.4 mW @ 4.5 V DC-DC Con

0.1. Size:153K onsemi
ntd4806n-1g.pdf pdf_icon

NTD4806N, NVD4806NPower MOSFET30 V, 76 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant6.0 mW @

8.1. Size:116K onsemi
ntd4805n nvd4805n.pdf pdf_icon

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q

8.2. Size:150K onsemi
ntd4809n-1g.pdf pdf_icon

NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv

8.3. Size:294K onsemi
ntd4805n-d.pdf pdf_icon

NTD4805NPower MOSFET30 V, 88 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.0 m @10V CPU Power Delivery30 V 88 A7.4 m @4.5V DC--DC Co

8.4. Size:117K onsemi
ntd4809n nvd4809n.pdf pdf_icon

NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

8.5. Size:330K onsemi
ntd4809nhg.pdf pdf_icon

NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC

8.6. Size:320K onsemi
ntd4808n-d.pdf pdf_icon

NTD4808NPower MOSFET30 V, 63 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications8.0 m @10V CPU Power Delivery30 V63 A12.4 m @4.5 V DC--DC

8.7. Size:110K onsemi
ntd4809na-1g.pdf pdf_icon

NTD4809NAAdvance InformationPower MOSFET25 V, 58 A, Single N- Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices9.0 mW @ 10 V25 V 58 AApplications14 mW @ 4.5 V CPU Power D

8.8. Size:270K onsemi
ntd4809n-d.pdf pdf_icon

NTD4809NPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V CPU Power Delivery30 V 58 A14 m @4.5 V DC--DC Co

8.9. Size:157K onsemi
ntd4804n-1g.pdf pdf_icon

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117

8.10. Size:153K onsemi
ntd4804na-1g.pdf pdf_icon

NTD4804NAAdvance InformationPower MOSFET25 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices4.0 mW @ 10 V25 V 117 AApplications5.5 mW @ 4.5 V CPU Power

8.11. Size:153K onsemi
ntd4809nh-1g.pdf pdf_icon

NTD4809NH, NVD4809NHPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4809NHV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 m

8.12. Size:89K onsemi
ntd4804n nvd4804n.pdf pdf_icon

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A

8.13. Size:275K onsemi
ntd4804n-d.pdf pdf_icon

NTD4804NPower MOSFET30 V, 117 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications4.0 m @10V CPU Power Delivery30 V 117 A5.5 m @4.5V DC--DC

8.14. Size:153K onsemi
ntd4805n-1g ntd4805nt4g.pdf pdf_icon

NTD4805N, NVD4805NPower MOSFET30 V, 88 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4805NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant5.0 mW @

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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NTD4806N MOSFET. Datasheet pdf. Equivalent

NTD4806N Datasheet (PDF)

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