NTD4863N Todos los transistores

 

NTD4863N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD4863N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 49 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19.7 nS
   Cossⓘ - Capacitancia de salida: 253 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

NTD4863N Datasheet (PDF)

 0.1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4863N

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App

 8.1. Size:100K  onsemi
 ntd4865n.pdf pdf_icon

NTD4863N

NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A

 8.2. Size:118K  onsemi
 ntd4860n.pdf pdf_icon

NTD4863N

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App

 8.3. Size:282K  onsemi
 ntd4860n-1g ntd4860n.pdf pdf_icon

NTD4863N

NTD4860NPower MOSFET25 V, 65 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices7.5 m @10V25 V65 AApplications11.1 m @4.5 V VCORE A

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLP042N10G-P | FQA5N90

 

 
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