All MOSFET. NTD4863N Datasheet

 

NTD4863N Datasheet and Replacement


   Type Designator: NTD4863N
   Marking Code: 4863N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: DPAK
 

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NTD4863N Datasheet (PDF)

 0.1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4863N

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App

 8.1. Size:100K  onsemi
 ntd4865n.pdf pdf_icon

NTD4863N

NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A

 8.2. Size:118K  onsemi
 ntd4860n.pdf pdf_icon

NTD4863N

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App

 8.3. Size:282K  onsemi
 ntd4860n-1g ntd4860n.pdf pdf_icon

NTD4863N

NTD4860NPower MOSFET25 V, 65 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices7.5 m @10V25 V65 AApplications11.1 m @4.5 V VCORE A

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Datasheet: NTD4813N , NTD4813NH , NTD4815N , NTD4855N , NTD4856N , NTD4857N , NTD4858N , NTD4860N , STP80NF70 , NTD4865N , NTD4904N , NTD4906N , NTD4909N , NTD4910N , NTD4913N , NTD4960N , NTD4963N .

History: CEM4201

Keywords - NTD4863N MOSFET datasheet

 NTD4863N cross reference
 NTD4863N equivalent finder
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