NTGS3136P Todos los transistores

 

NTGS3136P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTGS3136P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 5.8 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 18 nC

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: TSOP6

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NTGS3136P Datasheet (PDF)

1.1. ntgs3136pt1g.pdf Size:113K _update-mosfet

NTGS3136P
NTGS3136P

NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features • Low RDS(on) in TSOP-6 Package • 1.8 V Gate Rating http://onsemi.com • Fast Switching • This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 25 mW @ -4.5 V -5.1 A • Optimized for Battery and Load Management Applications in -20 V 32 mW @ -2.5 V -4.5 A Portable Equipment 41 mW @ -1.8 V -

1.2. ntgs3136p-d.pdf Size:113K _onsemi

NTGS3136P
NTGS3136P

NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating http://onsemi.com Fast Switching This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 25 mW @ -4.5 V -5.1 A Optimized for Battery and Load Management Applications in -20 V 32 mW @ -2.5 V -4.5 A Portable Equipment 41 mW @ -1.8 V -2.5 A High

 3.1. ntgs3130nt1g.pdf Size:87K _update-mosfet

NTGS3136P
NTGS3136P

NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features • Leading Edge Trench Technology for Low On Resistance http://onsemi.com • Low Gate Charge for Fast Switching • Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max • This is a Pb-Free Device 24 mW @ 4.5 V 5.6 A Applications 20 V • DC-DC Converters 32 mW @ 2.5 V 4.9 A • Lithium Ion Ba

3.2. ntgs3130n.pdf Size:87K _onsemi

NTGS3136P
NTGS3136P

NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features Leading Edge Trench Technology for Low On Resistance http://onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max This is a Pb-Free Device 24 mW @ 4.5 V 5.6 A Applications 20 V DC-DC Converters 32 mW @ 2.5 V 4.9 A Lithium Ion Battery Applicati

Otros transistores... NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , IRF640 , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P .

 

 
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